Cookies

We use cookies to ensure that we give you the best experience on our website. You can change your cookie settings at any time. Otherwise, we'll assume you're OK to continue.

Department of Physics

Staff profile

Publication details for Prof Richard Abram

Abram, R A, Rees, G J & Wilson, B L H (1978). Heavily doped semiconductors and devices. Advances In Physics 27(6): 799-892.

Author(s) from Durham

Abstract

High carrier concentrations and the fluctuations in random potential resulting from ionized impurities alter the density of states and electron wavefunctions in heavily doped semiconductors. The theoretical and experimental work on these effects is reviewed, special attention being paid to the consequences for the optical and transport properties. Semiconductor devices are often heavily doped and the influence of heavy doping is illustrated in the injection laser and bipolar transistor, which also serve as investigative tools.