Publication details for Prof Richard AbramCrow, G C & Abram, R A (2000). Monte Carlo simulations of hole transport in SiGe and Ge quantum wells. Semiconductor Science and Technology 15(1): 7-14.
- Publication type: Journal Article
- ISSN/ISBN: 0268-1242, 1361-6641
- DOI: 10.1088/0268-1242/15/1/302
- Further publication details on publisher web site
- Durham Research Online (DRO) - may include full text
Author(s) from Durham
Monte Carlo simulations have been carried out to investigate factors which
influence hole transport at 300 K for moderate electric fields .104–106 V m−1/ within
compressively strained Si1−xGex .x D 0:15 ! 0:30/ quantum wells deposited on Si. Drift
mobilities in the range 900–1200 cm2 V−1 s−1 have been calculated for pseudomorphic
structures with well widths 60 ! 110 Å, and trends in the mobility have been identified.
SiGe alloy disorder and interface roughness are the main factors which limit the mobility;
inelastic LO phonon scattering is less significant owing to the large phonon energy 60 MeV
and hence comparatively large threshold carrier wavevector for the onset of scattering. The
mobility in SiGe is compared with that simulated for an experimental Ge=Ge0:7Si0:3 structure.
The simulated drift mobility ratio for Ge/GeSi versus SiGe/Si is 10:1, a result which is
consistent with recent measurements. There are two main reasons for this—a comparatively
low in-plane heavy hole effective mass and significantly reduced alloy scattering. This is
despite greater surface roughness derived from the reported experimental data.