Publication details for Professor Stewart ClarkLiu, D., Clark, S.J. & Robertson, J. (2010). Oxygen vacancy levels and electron transport in Al(2)O(3). Applied Physics Letters 96(3): 032905.
- Publication type: Journal Article
- ISSN/ISBN: 0003-6951, 1077-3118
- DOI: 10.1063/1.3293440
- Keywords: Aluminium compounds, Conduction bands, Hopping conduction, Vacancies (crystal), Valence bands.
- Further publication details on publisher web site
- Durham Research Online (DRO) - may include full text
Author(s) from Durham
The energy levels of the oxygen vacancy in α- and θ-Al2O3 were calculated using the screened exchange hybrid functional, and explain the electron hopping and trapping levels seen in deposited Al2O3 at ∼ 1.8 eV below its conduction band edge. The vacancy supports five accessible charge states, from 2+ to 2−. Electron hopping corresponds to the 0/− level, which lies 1.8 eV below the conduction band edge in θ-Al2O3. This level lies much deeper than it does HfO2. The +/0 level lies at 2.8 eV above oxide valence band in θ-Al2O3 and thus below the Si valence band top.