Publication details for Professor Michael PettyJeong, Y., Pearson, C., Kim, H-G., Park, M-Y., Kim, H., Do, L-M. & Petty, M.C. (2016). Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors. ACS Applied Materials & Interfaces 8(3): 2061-2070.
- Publication type: Journal Article
- ISSN/ISBN: 1944-8244 (print), 1944-8252 (electronic)
- DOI: 10.1021/acsami.5b10520
- Keywords: Solution process, Low temperature, Solution-processed silicon dioxide, Zinc oxide, Zinc oxide field-effect transistor, Oxygen plasma.
- Further publication details on publisher web site
- Durham Research Online (DRO) - may include full text
Author(s) from Durham
We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10−7 A/cm2) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm2/(V s), an on/off ratio of ∼107, a threshold voltage of −1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm2/(V s) and on/off ratio of ∼107.