Publication details for Dr Mujeeb Ullah ChaudhryChaudhry, M.U., Panidi, J., Nam, S., Smith, A., Lim, J., Tezner, K., Patsalos, P.A., Vourlias, G., Sit, W., Firdaus, Y., Heeney, M., Bradley, D. & Anthopoulos, T.D. (2019). Polymer Light‐Emitting Transistors With Charge‐Carrier Mobilities Exceeding 1 cm2 V−1 s−1. Advanced Electronic Materials
- Publication type: Journal Article
- ISSN/ISBN: 2199-160X
- DOI: 10.1002/aelm.201901132
- Further publication details on publisher web site
- Durham Research Online (DRO) - may include full text
Author(s) from Durham
The vast majority of conjugated polymer-based light emitting field-effect transistors (LEFETs) are characterized by low charge carrier mobilities typically in the range 10-5 to 10-3 cm2 V-1 s-1 range. Fast carrier transport is a highly desirable characteristic for high frequency LEFET operation and, potentially, for use in electrically-pumped lasers. Unfortunately, high mobility organic semiconductors are often characterised by strong intermolecular π-π interactions that reduce luminescence. Development of new materials and/or device concepts that overcome this hurdle are therefore required. We report single organic semiconductor layer, light-emitting transistors that combine the highest hole mobilities reported to date for any polymer-based LEFET, with encouraging light emission characteristics. We achieve this in a single polymer layer LEFET, which was further enhanced through the use of a small-molecule/conjugated polymer blend system that possesses a film microstructure which supports enhanced charge carrier mobility (3.2 cm2 V-1 s-1) and promising light emission characteristics (1600 cd m-2) as compared to polymer-only based LEFETs. This simple approach represents an attractive strategy to further advance the performance of solution-processed LEFETs.