Publication details for Dr Mujeeb Ullah Chaudhry

Chaudhry, Mujeeb Ullah, Wang, Nana, Tetzner, Kornelius, Seitkhan, Akmaral, Miao, Yanfeng, Sun, Yan, Petty, Michael C., Anthopoulos, Thomas D., Wang, Jianpu & Bradley, Donal D. C. (2019). Light‐Emitting Transistors Based on Solution‐Processed Heterostructures of Self‐Organized Multiple‐Quantum‐Well Perovskite and Metal‐Oxide Semiconductors. Advanced Electronic Materials 5(7): 1800985.

• Publication type: Journal Article
• ISSN/ISBN: 2199-160X (print), 2199-160X (electronic)
• DOI: 10.1002/aelm.201800985
• Further publication details on publisher web site
• Durham Research Online (DRO) - may include full text

Author(s) from Durham

• Dr Mujeeb Ullah Chaudhry

Abstract

Solution‐processed hybrid organic–inorganic perovskite semiconductors have demonstrated remarkable performance for both photovoltaic and light‐emitting‐diode applications in recent years, launching a new field of condensed matter physics. However, their use in other emerging optoelectronic applications, such as light‐emitting field‐effect transistors (LEFETs) has been surprisingly limited, wth only a few low‐performance devices reported. The development of hybrid LEFETs consisting of a solution‐processed self‐organized multiple‐quantum‐well lead iodide perovskite layer grown onto an electron‐transporting In2O3/ZnO heterojunction channel is reported. The multilayer transistors offer bifunctional characteristics, namely, transistor function with high electron mobility (>20 cm2 V−1 s−1) and a large current on/off ratio (>106), combined with near infrared light emission (λmax = 783 nm) and a promising external quantum efficiency (≈0.2% at 18 cd m−2). A further interesting feature of these hybrid LEFETs, in comparison to previously reported structures, is their highly uniform and stable emission characteristics, which make them attractive for smart‐pixel‐format display applications.