Publication details for Dr Mujeeb Ullah ChaudhryUllah, Mujeeb, Tandy, Kristen, Li, Jun, Shi, Zugui, Burn, Paul L., Meredith, Paul & Namdas, Ebinazar B. (2014). High-Mobility, Heterostructure Light-Emitting Transistors and Complementary Inverters. ACS Photonics 1(10): 954-959.
- Publication type: Journal Article
- ISSN/ISBN: 2330-4022 (print), 2330-4022 (electronic)
- DOI: 10.1021/ph500300n
- Further publication details on publisher web site
Author(s) from Durham
Light-emitting field effect transistors (LEFETs) are optoelectronic devices that can simultaneously execute light emission and the standard logic functions of a transistor in a single device architecture. In this article, we show that ambipolar LEFETs can be made in a bilayer structure using Super Yellow, a light-emitting polymer layer, and a high-mobility diketopyrrolo-pyrrole-based copolymer as an ambipolar charge-transporting layer. The LEFETs were fabricated in the bottom gate architecture with top-contact, air-stable, symmetric Au–Au electrodes. The devices show light emission in both electron and hole accumulation modes with an external quantum efficiency (EQE) of 0.1% at a brightness of 650 cd/m2 in electron accumulation mode, and an EQE of 0.001% at a brightness of 4 cd/m2 in hole accumulation mode. We have also demonstrated a light-emitting inverter by combining two LEFETs into the inverter architecture. The light-emitting inverter generates both electrical and optical signals with an electrical gain of 112.