Publication details for Professor Dagou ZezeMabrook, M.F., Jombert, A.S., Machin, S.E., Pearson, C., Kolb, D., Coleman, K.S., Zeze, D.A. & Petty, M.C. (2009). Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements. Materials Science And Engineering B-advanced Functional Solid-state Materials 159-160: 14-17.
- Publication type: Journal Article
- ISSN/ISBN: 0921-5107
- DOI: 10.1016/j.mseb.2008.09.003
- Keywords: Cold nanoparticles; C-60; Carbon nanotubes; PMMA; Memory devicesMETALLIC NANOPARTICLES; CARBON NANOTUBE; THIN-FILMS; FABRICATION; DEVICE; LAYERS; OXIDE
- Further publication details on publisher web site
Author(s) from Durham
We report on the electrical behaviour of metal–insulator–semiconductor (MIS) structures fabricated on p-type silicon substrates and using polymethylmethacrylate (PMMA) as the dielectric. Gold nanoparticles, single-wall carbon nanotubes and C60, deposited at room temperature, were used as charge-storage elements. In all cases, the MIS devices containing the nanoparticles exhibited hysteresis in their capacitance versus voltage characteristics, with a memory window depending on the range of the voltage sweep. This hysteresis was attributed to the charging and discharging of the nanoparticles from the gate electrode. A relatively large memory window of about 2.2 V was achieved by scanning the applied voltage of an Al/PMMA/C60/SiO2/Si structure between 4 and −4 V. Gold nanoparticle-based memory devices produced the best charge retention behaviour compared to the other MIS structures investigated.