Cookies

We use cookies to ensure that we give you the best experience on our website. You can change your cookie settings at any time. Otherwise, we'll assume you're OK to continue.

Durham University

Department of Engineering

Staff Profile

Publication details for Professor Dagou Zeze

Zeze, D.A, Forrest, R. D., Carey, J. D., Cox, D. C., Robertson, I. D., Weiss, B. L. & Silva, S. R. P. (2002). Reactive ion etching of quartz and pyrex for micro electronic applications. Journal of applied physics 92(7): 3624-3629.

Author(s) from Durham

Abstract

The reactive ion etching of quartz and Pyrex substrates was carried out using CF4/Ar and CF4/O2 gas mixtures in a combined radio frequency (rf)/microwave (µw) plasma. It was observed that the etch rate and the surface morphology of the etched regions depended on the gas mixture (CF4/Ar or CF4/O2), the relative concentration of CF4 in the gas mixture, the rf power (and the associated self-induced bias) and microwave power. An etch rate of 95 nm/min for quartz was achieved. For samples covered with a thin metal layer, ex situ high resolution scanning electron microscopy and atomic force microscopy imaging indicated that, during etching, surface roughness is produced on the surface beneath the thin metallic mask. Near vertical sidewalls with a taper angle greater than 80° and smooth etched surfaces at the nanometric scale were fabricated by carefully controlling the etching parameters and the masking technique. A simulation of the electrostatic field distribution was carried out to understand the etching process using these masks for the fabrication of high definition features.

References

1 C. Peirrat, T. Siegrist, J. De Marco, L. Harriot, and S. Vaida, J. Vac. Sci.
Technol. A 14, 63 ~1996!.
2M. Esashi, Microsyst. Technol. 1, 2 ~1994!.
3 K. D. Skeldon, J. Mackintosh, M. von Gradowski, S. Thieux, and R. Lee,
J. Opt. A, Pure Appl. Opt. 3, 183 ~2001!.
4 N. St. J. Braithwaite, Plasma Sources Sci. Technol. 9, 517 ~2000!.
5P. W. Leech, Vacuum 55, 191 ~1999!.
6 X. Li, T. Abe, and M. Esashi, Sens. Actuators A 87, 139 ~2001!.
7 S. Rauf and M. Kushner, IEEE Trans. Semicond. Manuf. 11, 486 ~1998!.
8 H. Ito and N. Sakudo, Ion Implantation Technology–96, IEEE, 1997, p.
291.
9 R. D’Agostino, F. Cramarossa, S. De Benedictis, and G. Ferraro, J. Appl.
Phys. 52, 1259 ~1981!.
10 E. W. Berg and S. W. Pang, J. Vac. Sci. Technol. B 16, 3359 ~1998!.
11 Z.-H. Liu, N. M. D. Brown, and A. McKinley, Appl. Surf. Sci. 108, 319
~1997!.
12 D. X. Ma, T. R. Webb, A. Zhao, Z. Huang, D. Tajima, and P. K. Loewenhardt,
Proceedings of the 11th ISPP Conference ~The Electrochem. Society,
Pennington, NJ, 1996!, p. 250.
13M. V. Bazylenko and M. Gross, J. Vac. Sci. Technol. A 14, 2994 ~1996!.