Cookies

We use cookies to ensure that we give you the best experience on our website. You can change your cookie settings at any time. Otherwise, we'll assume you're OK to continue.

Durham University

Department of Engineering

Staff Profile

Publication details for Professor Dagou Zeze

Tian (田琳), Lin, Di Mario, Lorenzo, Minotti, Antonio, Tiburzi, Giorgio, Mendis, Budhika G., Zeze, Dagou A. & Martelli, Faustino (2016). Direct growth of Si nanowires on flexible organic substrates. Nanotechnology 27(22): 225601.

Author(s) from Durham

Abstract

A key characteristic of semiconductor nanowires (NWs) is that they grow on any substrate that can withstand the growth conditions, paving the way for their use in flexible electronics. We report on the direct growth of crystalline silicon nanowires on polyimide substrates. The Si NWs are grown by plasma-enhanced chemical vapor deposition, which allows the growth to proceed at temperatures low enough to be compatible with plastic substrates (350 °C), where gold or indium are used as growth seeds. In is particularly interesting as the seed not only because it leads to a better NW crystal quality but also because it overcomes a core problem induced by the use of Au in silicon processing, i.e. Au creates deep carrier traps when incorporated in the nanowires.