Staff and Governance
The day-to-day running of IMEMS is the responsibility of the Core Executive Committee, comprising the Director and Associate Directors and the Administrator.
Publication details for Prof Brian TannerTanner, BK, Wittge, J, Allen, D, Fossati, MC, Danilwesky, AN, McNally, P, Garagorri, J, Elizalde, MR & Jacques, D (2011). Thermal slip sources at the extremity and bevel edge of silicon wafers. Journal Of Applied Crystallography 44(3): 489-494.
- Publication type: Journal Article
- ISSN/ISBN: 0021-8898, 1600-5767
- DOI: 10.1107/S0021889811012088
- Keywords: CRYSTAL DEFECTS; TECHNOLOGY; GENERATION; TOPOGRAPHY; STRESSES
- Further publication details on publisher web site
Author(s) from Durham
High-resolution X-ray diffraction imaging of 200 mm silicon wafers following rapid thermal annealing at a temperature of 1270 K has revealed the presence of many early stage sources of thermal slip associated with the wafer edge. Dislocation sources are primarily at the wafer extremity, though many are generated by damage at the edge of the bevel incline on the wafer surface. A smaller fraction of sources is associated with other regions of localized damage, probably relating to protrusions on the wafer support. The geometry of the latter is similar to that of dislocation sources generated by controlled indentation on the wafer surface. It is concluded that rapid spike annealing at high temperature does not suppress the nucleation of slip, but rather the rapidity of the process prevents the propagation of the dislocations in the slip band into the wafer.
Full Executive Committee
Our Full Executive Committee is made up of the Core Executive Committee, listed above, plus a number of executive members including:
International Advisory Board
We are extremely fortunate to have be able to call on the help and guidance of colleagues from around the world who help to shape and guide our direction, strategy and international reach. Our current Advisory Board members are: