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Research

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Publication details for Professor Michael Petty

Jeong, Y., Pearson, C., Kim, H.-G., Park, M.-Y., Kim, H., Do, L.-M. & Petty, M. C. (2015). Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors. RSC Advances 5(45): 36083-36087.

Author(s) from Durham

Abstract

We report on the low-temperature formation (180 °C) of a SiO2 dielectric layer from solution-processed perhydropolysilazane. A bottom-gate zinc oxide thin-film transistor has subsequently been fabricated that possesses a carrier mobility of 3 cm2 V s−1, an on/off ratio of 107 and minimal hysteresis in its transfer and output characteristics.