Publication details for Professor Michael PettyJeong, Y., Pearson, C., Kim, H.-G., Park, M.-Y., Kim, H., Do, L.-M. & Petty, M. C. (2015). Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors. RSC Advances 5(45): 36083-36087.
- Publication type: Journal Article
- ISSN/ISBN: 2046-2069 (electronic)
- DOI: 10.1039/C5RA02989A
- Further publication details on publisher web site
- Durham Research Online (DRO) - may include full text
Author(s) from Durham
We report on the low-temperature formation (180 °C) of a SiO2 dielectric layer from solution-processed perhydropolysilazane. A bottom-gate zinc oxide thin-film transistor has subsequently been fabricated that possesses a carrier mobility of 3 cm2 V s−1, an on/off ratio of 107 and minimal hysteresis in its transfer and output characteristics.