Publication details for Professor Michael PettyJeong, Y., Pearson, C., Lee, Y.U., Ahn K., Cho, C.-R., Hwang, J., Kim, H., Do, L.-M. & Petty, M.C. (2014). Effects of hydrogen plasma treatment on the electrical behavior of solution-processed ZnO transistors. Journal of Applied Physics 116(7): 074509.
- Publication type: Journal Article
- ISSN/ISBN: 0021-8979 (print), 1089-7550 (electronic)
- DOI: 10.1063/1.4893470
- Further publication details on publisher web site
- Durham Research Online (DRO) - may include full text
Author(s) from Durham
The effects of hydrogen plasma treatment on the active layer of top-contact zinc oxide thin film transistors are reported. The transfer characteristics of the reference devices exhibited large hysteresis effects and an increasing positive threshold voltage (VTH) shift on repeated measurements. In contrast, following the plasma processing, the corresponding characteristics of the transistors exhibited negligible hysteresis and a very small VTH shift; the devices also possessed higher field effect carrier mobility values. These results were attributed to the presence of functional groups in the vicinity of the semiconductor/gate insulator interface, which prevents the formation of an effective channel.