Cookies

We use cookies to ensure that we give you the best experience on our website. You can change your cookie settings at any time. Otherwise, we'll assume you're OK to continue.

Research

View Profile

Publication details for Professor Michael Petty

Hwang, J, Lee, K, Jeong, J, Lee, YU, Pearson, C, Petty, MC & Kim, H (2014). UV-assisted low temperature oxide dielectric films for TFT applications. Advanced Materials Interfaces 1(8): 1400206.

Author(s) from Durham

Abstract

Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annealing at 150 °C. The leakage current densities of ZrO2 and Al2O3 dielectrics are less than about 10-9 A/cm2 at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm2/V.s and an off-current density of 10-12 A/cm2. This low fabrication temperature process is compatible with future plastic electronics technology.