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Durham University

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Publication details for Professor Del Atkinson

Troughton, J., Downs, P., Price, R. & Atkinson, D. (2017). Densification of a-IGZO with low-temperature annealing for flexible electronics applications. Applied Physics Letters 110(1): 011903.

Author(s) from Durham


Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at high-temperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 °C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption.