Publication details for Prof Richard AbramWilson, S P , Brand, S , Beattie, A R & Abram, R A (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs. Semiconductor Science and Technology 8: 1944-1956.
- Publication type: Journal Article
- Further publication details on publisher web site