Publication details for Professor Stewart ClarkHsueh, H.C., Vass, H., Clark, S.J. & Crain, J. (1995). Breakdown of Rigid-Unit Vibrations in Layered Semiconductors under Pressure: Application to Germanium Sulfide. Europhysics Letters 31(3): 151-155.
- Publication type: Journal Article
- ISSN/ISBN: 0295-5075, 1286-4854
- DOI: 10.1209/0295-5075/31/3/005
- Further publication details on publisher web site
Author(s) from Durham
A combination of high-sensitivity Raman scattering and ab initio computer simulations is used to explore the lattice dynamics of the prototypical layered semiconductor GeS under hydrostatic pressure. The observed and calculated pressure responses of the Ag layer shear mode are in excellent agreement over the entire pressure range of the experiments (0 to 50 kbar). Examination of the calculated phonon eigenvectors reveals that the "rigid-layer" model is an appropriate description of the lattice dynamics only under near-ambient-pressure conditions and that substantial mode admixture occurs under compression.