FIB lithography uses the Ga ion beam to mill/etch and deposit material at high spatial resolution (a few nm). It is an important quality control tool for circuit editing. The milling is due to the heavy Ga ions sputtering the material. Various user-defined shapes can be milled by controlling the raster pattern and dwell time of the Ga beam. For deposition a gas is first injected into the chamber. Secondary electrons emitted by the interaction of the Ga beam with the specimen break down the gas molecules, leading to material deposition. Platinum and insulator silica can be deposited on our microscope. An electrostatic beam blanker is also available for electron beam lithography.