Staff profile

Prof Richard Abram, BSc, PhD, FInstP, CPhys, CEng.

Professor in the Department of Physics

Telephone: +44 (0) 191 33 43525

Room number: 143

Member of the Centre for Materials Physics

Research Interests

I am a member of the Condensed Matter Theory Group within the Centre for Materials Physics and have personal research interests in the theory of photonic microstructures and the light-matter interaction.

Research Groups

Centre for Materials Physics

Publications

Journal papers: academic

Iorsh, Ivan, Glauser, Marlene, Rossbach, Georg, Levrat, Jacques, Cobet, Munise, Butte, Raphael, Grandjean, Nicolas, Kaliteevski, Mikhail A., Abram, Richard A. & Kavokin, Alexey V. (2012). Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response. Physical Review B 86(12): 125308.
Brueckner, R., Sudzius, M., Hintschich, S.I., Froeb, H., Lyssenko, V.G., Kaliteevski, M.A., Iorsh, I., Abram, R.A., Kavokin, A.V. & Leo, K. (2012). Parabolic polarization splitting of Tamm states in a metal-organic microcavity. Applied Physics Letters 100(6): 062101, 4.
Little, CE, Anufriev, R, Iorsh, I, Kaliteevski, MA, Abram, RA & Brand, S (2012). Tamm plasmon polaritons in multilayered cylindrical structures. Physical Review B 86(23): 235425.
Iorsh, IV, Kaliteevski, MA, Brand, S, Abram, RA & Kaliteevskaya, NA (2011). An 'electromagnetic wiggler' originating from refraction of waves at the side edge of a Bragg reflector. Journal of Modern Optics 58(8): 686-693.
Kaliteevski, M, Brand, S, Abram, RA, Iorsh, I, Kavokin, AV, Liew, TCH & Shelykh, IA (2011). Hybrid states of Tamm plasmons and exciton-polaritons. Superlattices and Microstructures 49(3): 229-232.
Swift, G.P., Gallant, A.J., Kaliteevskaya, N., Kaliteevski, M.A., Brand, S., Dai, D., Baragwanath, A.J., Iorsh, I., Abram, R.A. & Chamberlain, J.M. (2011). Negative refraction and the spectral filtering of terahertz radiation by a photonic crystal prism. Optics Letters 36(9): 1641-1643.
Brand, S, Abram, RA & Kaliteevski, MA (2010). Evanescently coupled interface states in the gap between two Bragg reflectors. Optics Letters 35(12): 2085-2087.
Liew, TCH, Kavokin, AV, Ostatnicky, T, Kaliteevski, M, Shelykh, IA & Abram, RA (2010). Exciton-polariton integrated circuits. Physical Review B 82(3): 033302.
Iorsh, IV, Koreshkova, AG, Kaliteevskaya, NA, Kavokin, AV, Abram, RA, Brand, S & Kaliteevski, MA (2010). Polarization beats in a pillar microcavity. Superlattices and Microstructures 47(1): 24-28.
Cirlin, GE, Dubrovskii, VG, Samsonenko, YB, Bouravleuv, AD, Durose, K, Proskuryakov, YY, Mendes, B, Bowen, L, Kaliteevski, MA, Abram, RA & Zeze, D (2010). Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy. Physical Review B 82(3): 035302
Kavokin, K V, Kaliteevski, M A, Abram, R A, Kavokin, A V, Sharkova, S & Shelykh, I A (2010). Stimulated emission of terahertz radiation by exciton-polariton lasers. Applied Physics Letters 97(20): 201111.
Brand, S, Abram, RA & Kaliteevski, MA (2010). Tailor-made surface plasmon polaritons above the bulk plasma frequency: a design strategy for indium tin oxide. Journal of Physics D - Applied Physics 43(14): 145104.
Sasin, ME, Seisyan, RP, Kaliteevski, MA, Brand, S, Abram, RA, Chamberlain, JM, Iorsh, IV, Shelykh, IA, Egorov, AY, Vasil'ev, AP, Mikhrin, VS & Kavokin, AV (2010). Tamm plasmon-polaritons: First experimental observation. Superlattices and Microstructures 47(1): 44-49.
Brand, S, Abram, RA & Kaliteevski, MA (2009). Bragg reflector enhanced attenuated total reflectance. Journal of Applied Physics 106(11): 113109.
Kaliteevski, M, Brand, S, Abram, RA, Iorsh, I, Kavokin, AV & Shelykh, IA (2009). Hybrid states of Tamm plasmons and exciton polaritons. Applied Physics Letters 95(25): 251108.
Brand, S, Kaliteevski, MA & Abram, RA (2009). Optical Tamm states above the bulk plasma frequency at a Bragg stack/metal interface. Physical Review B 79(8): 085416
Platts, CE, Kaliteevski, MA, Brand, S, Abram, RA, Iorsh, IV & Kavokin, AV (2009). Whispering-gallery exciton polaritons in submicron spheres. Physical Review B 79(24): 245322.
Greshnov, AA, Kaliteevski, MA, Abram, RA, Brand, S & Zegrya, GG (2008). Density of states in 1D disordered photonic crystals: Analytical solution. Solid State Communications 146(3-4): 157-160.
Kaliteevski, A, Brand, S, Abram, RA, Gallant, AJ & Chamberlain, JM (2008). Negative refraction can make non-diffracting beams. Optics Express 16(19): 14582-14587.
Sasin, ME, Seisyan, RP, Kaliteevski, MA, Brand, S, Abram, RA, Chamberlain, JM, Egorov, AY, Vasil'ev, AP, Mikhrin, VS & Kavokin, AV (2008). Tamm plasmon polaritons: Slow and spatially compact light. Applied Physics Letters 92(25): 251112.
Kaliteevski, MA, Brand, S, Garvie-Cook, J, Abram, RA & Chamberlain, JM (2008). Terahertz filter based on refractive properties of metallic photonic crystal. Optics Express 16(10): 7330-7335.
Gallant, A.J., Levitt, J.A., Kaliteevski, M., Wood, D., Petty, M.C., Abram, R.A., Brand, S., Swift, G.P., Zeze,D.A. & Chamberlain, J.M. (2007). Artificial plasmonic materials for THz applications. Proceedings of SPIE 6472: 647206 - 647216.
Brand, S, Abram, R A & Kaliteevski, M A (2007). Complex photonic band structure and effective plasma frequency of a two-dimensional array of metal rods. Physical Review B 75(3): 035102.
Greshnov, AA, Kaliteevskii, MA, Abram, RA, Brand, S & Zegrya, GG (2007). Density of states of a one-dimensional disordered photonic crystal. Physics of the Solid State 49(10): 1999-2003.
Tronciu, V Z, Abram, R A, Rusu, S S & Bardetskii, P I (2007). Dynamics of a nonlinear ring cavity: Excitability and coherent resonance. Physics of the Solid State 49(3): 426-430.
Kaliteevski, MA, Brand, S, Chamberlain, JM, Abram, RA & Nikolaev, VV (2007). Effect of longitudinal excitations on surface plasmons. Solid State Communications 144(9): 413-417.
Shelykh, I A, Kaliteevskii, M, Kavokin, A V, Brand, S, Abram, R A, Chamberlain, J M & Malpuech, G (2007). Interface photonic states at the boundary between a metal and a dielectric Bragg mirror. Physica Status Solidi A - Applications and Materials Science 204(2): 522-525.
Zheng, G, Clark, SJ, Brand, S & Abram, RA (2007). Non-local density functional description of poly-para-phenylene vinylene. Chinese Physics Letters 24(3): 807-810.
Gallant, AJ, Kaliteevski, MA, Wood, D, Petty, MC, Abram, RA, Brand, S, Swift, GP, Zeze, DA & Chamberlain, JM (2007). Passband filters for terahertz radiation based on dual metallic photonic structures. Applied Physics Letters 91(16): 161115.
Beggs, D M, Kaliteevski, M A & Abram, R A (2007). Properties of microcavities in two-dimensional photonic quasicrystals with octagonal rotational symmetry. Journal of Modern Optics 54(6): 881-893.
Kaliteevski, M, Iorsh, I, Brand, S, Abram, RA, Chamberlain, JM, Kavokin, AV & Shelykh, IA (2007). Tamm plasmon-polaritons: Possible electromagnetic states at the interface of a metal and a dielectric Bragg mirror. Physical Review B 76(16): 165415.
Gallant, AJ, Kaliteevski, MA, Brand, S, Wood, D, Petty, M, Abram, RA & Chamberlain, JM (2007). Terahertz frequency bandpass filters. Journal of Applied Physics 102(2): 023102.
Kaliteevski, MA, Brand, S, Abram, RA, Kavokin, A & Dang, Le Si (2007). Whispering gallery polaritons in cylindrical cavities. Physical Review B 75(23): 233309.
Gallant, A. J., Levitt, J. A. , Kaliteevski, M. , Wood, D., Petty, M. C., Abram, R. A., Brand, S. & Chamberlain, J. M. (2006). Enhanced THz transmission apertures through sub-wavelength annular apertures. Proceedings of SPIE 6323: 32316.
Zheng, G, Clark, SJ, Brand, S & Abram, RA (2006). Lattice dynamics of polyaniline and poly(p-pyridyl vinyline): First-principles determination. Physical Review B 74(16): 165210.
Timon, V, Brand, S, Clark, S J & Abram, R A (2006). Molecular dynamics calculations of the thermal expansion properties and melting points of Si and Ge. Journal of the Physics of Condensed Matter 18(13): 3489-3498.
Kaliteevski, M A, Beggs, D M, Brand, S, Abram, R A, Fletcher, J R, Swift, G P & Chamberlain, J M (2006). Propagation of electromagnetic waves through a system of randomly placed cylinders: the partial scattering wave resonance. Journal of Modern Optics 53(14): 2089-2097.
Roper, D T, Beggs, D M, Kaliteevski, M A, Brand, S & Abram, R A (2006). Properties of two-dimensional photonic crystals with octagonal quasicrystalline unit cells. Journal of Modern Optics 53(3): 407-416.
Kaliteevski, M. A., Beggs, D. M, Brand, S., Abram, R. A. & Nikolaev, V. V. (2006). Stability of the photonic band gap in the presence of disorder. Physical Review B 73(3): 033106.
Kaliteevski, M A, Beggs, D M, Brand, S, Abram, R A & Nikolaev, V V (2006). Statistics of the eigenmodes and optical properties of one-dimensional disordered photonic crystals. Physical Review E 73(5): 056616.
Swift, G P, Dai, D, Fletcher, J R, Gallant, A J, Levitt, J A, Abram, R A, Beggs, D M, Kaliteevski, M A & Chamberlain, J M (2006). Terahertz scattering: comparison of a novel theoretical approach with experiment. Proceedings of SPIE 6120: R1200-R1200.
Brand, S, Kaliteevski, M A & Abram, R A (2006). THz frequency studies of metallic structures. Proceedings of SPIE 6328: 63280-63280.
Zheng, Guang , Clark, S J , Tulip, P R , Brand, S & Abram, R A (2005). Ab initio dynamics study of poly-para-phenylene vinylene. Journal of Chemical Physics 123(2): 024904.
Beggs, D M, Kaliteevski, M A, Brand, S, Abram, R A, Cassagne, D & Albert, J P (2005). Disorder induced modification of reflection and transmission spectra of a two-dimensional photonic crystal with an incomplete band-gap. Journal of Physics: Condensed Matter 17(26): 4049-4055.
Beggs, D M, Kaliteevski, M A, Abram, R A, Cassagne, D & Albert, J P (2005). Disorder-induced modification of the transmission of light through two-dimensional photonic crystals. Journal of Physics: Condensed Matter 17(12): 1781-1790.
Kaliteevski M A, Nikolaev V V & Abram R A (2005). Eigenstate statistics and optical properties of one-dimensional disordered photonic crystals. Physics of the Solid State 47(10): 1948-1957.
Timon V, Brand S, Clark S J, Gibson M C & Abram R A (2005). First-principles calculations of 2x2 reconstructions of GaN (0001) surfaces involving N, Al, Ga, In, and As atoms. Physical Review B 72(3): 035327.
Herbert, D C, Childs, P A, Abram, R A, Crow, G C & Walmsley, M (2005). Monte Carlo simulations of high-speed InSb-InAlSb FETs. IEEE Transactions on Electron Devices 52(6): 1072-1078.
Herbert, D C, Childs, P A, Abram, R A, Crow, G C & Walmsley, M (2005). Self-consistent 2-D Monte Carlo simulations of InSb APD. IEEE Transactions on Electron Devices 52(10): 2175-2181.
Timon, V, Brand, S , Clark, S J & Abram, R A (2005). Theoretical adlayer surface morphology of wurtzite 2 × 2 reconstructions of the GaN (0001) surface. Journal of Physics: Condensed Matter 17(1): 17-26.
Beggs, D M, Kaliteevski, M A, Brand, S, Abram, R A & Kavokin, A V (2005). Waveguide polaritons: interaction of a quantum well exciton with an electromagnetic mode of a planar waveguide. Physica Status Solidi C 2(2): 787-790.
Tronciu, V Z Yamada, Minoru Kawakami, Toshiyuki Ito, Shigetoshi, Ohno, Tomoki Taneya, Mototaka & Abram, R A (2004). A theoretical and experimental investigation of the dynamics of tandem blue-violet lasers. Optics Communications 235(4-6): 409-414.
Wang, X Q, Clark, S J & Abram, R A (2004). Ab initio calculations of the structural and electronic properties of Hg_m Te_n clusters. Physical Review B 70(23): 235328.
Timon, V, Brand, S, Clark, S J & Abram, R A (2004). Ab initio studies of strained wurtzite GaN surfaces. Journal of Physics: Condensed Matter 16(4): 531-542.
Tronciu, V Z, Yamada, M & Abram, R A (2004). Analysis of the dynamics of a blue-violet In_x Ga_1-x N laser with a saturable absorber. Physical Review E 70(2): 026604.
Kaliteevski, M A , Brand, S & Abram, R A (2004). Directionality of light transmission and reflection in two-dimensional Penrose tiled photonic quasicrystals. Journal of Physics: Condensed Matter 16(8): 1269-1278.
Beggs, D M , Kaliteevski, M A & Abram, R A (2004). Etched Bragg reflectors as two-dimensional photonic crystals. Journal of Physics: Condensed Matter 16(45): 8093-8099.
Zheng, Guang , Clark, S J , Brand, S & Abram, R A (2004). First-principles studies of the structural and electronic properties of poly-para-phenylene vinylene. Journal of Physics: Condensed Matter 16(47): 8609-8620.
Beggs, D M, Kaliteevski, M A , Brand, S , Abram, R A , Nikolaev, V V & Kavokin, A V (2004). Interaction of quantum well excitons with evanescent plane electromagnetic waves. Journal Physics: Condensed Matter 16(20): 3401-3409.
Beggs, D M , Kaliteevski, M A , Brand, S & Abram, R A (2004). Optimization of an optical filter with a square-shaped passband based on coupled microcavities. Journal of Modern Optics 51(3): 437-446.
Kaliteevski, M A, Manzanares Martinez, J, Cassagne, D, Albert, J P, Brand, S & Abram, R A (2003). Appearance of photonic minibands in disordered photonic crystals. Journal of Physics: Condensed Matter 15(6): 785-790.
Tronciu, V Z & Abram, R A (2002). Excitability of excitons and biexcitons in a ring cavity. Physical Review E 65(2): 026616.
Bettess, P & Abram, R A (2002). Finite and infinite elements for a simple problem in quantum mechanics. Communications in Numerical Methods in Engineering 18(5): 325-334.
Herbert, D C, Uren, M J, Hughes, B T, Hayes, D G, Birbeck, J C H, Balmer, R, Martin, T, Crow, G C, Abram, R A, Walmsley, M, Davies, R A, Wallis, R H, Phillips, W A & Jones, S (2002). Monte Carlo simulations of AlGaN/GaN heterojunction field-effect transistors (HFETs). Journal of Physics: Condensed Matter 14(13): 3479-3497.
Kaliteevski, M A , Nikolaev, V V Abram, R A & Brand, S (2001). Bandgap structure of optical Fibonacci lattices after light diffraction. Optics and Spectroscopy 91(1): 109-118.
Kaliteevski, M A, Brand, S , Abram, R A , Krauss, T F Millar, P & DeLa Rue, R M (2001). Diffraction and transmission of light in low-refractive index Penrose-tiled photonic quasicrystals. Journal of Physics: Condensed Matter 13(46): 10459-10470.
Kaliteevski, M A, Brand, S, Abram, R A, Nikolaev, V V, Maximov, M V, Sotomayor Torres, C M & Kavokin, A V (2001). Electromagnetic theory of the coupling of zero-dimensional exciton and photon states: A quantum dot in a spherical microcavity. Physical Review B 64(11): 115305.
Kaliteevski, M A, Brand, S , Abram, R A & Nikolaev, V V (2001). Optical eigenmodes of a multilayered spherical microcavity. Journal of Modern Optics 48(9): 1503-1516.
Abram, R A , Brand, S , Kaliteevski, M A & Nikolaev V V (2001). Optical eigenmodes of a spherical microcavity. Physica Status Solidi A 183(1): 183-187.
Kaliteevski, M A, Brand, S , Abram, R A , Krauss, T F de La Rue, R & Millar, P (2001). The design of two-dimensional photonic quasicrystals by means of a Fourier transform method. Journal of Modern Optics 48(1): 9-14.
Crow, G C & Abram, R A (2001). The transient signal response of submicron vertical silicon field-effect transistors. Semiconductor Science and Technology 16(4): 250-254.
Kaliteevski, M A , Nikolaev, V V & Abram, R A (2000). Calculation of the mode structure of multilayer optical fibers based on transfer matrices for cylindrical waves. Optics and Spectroscopy 88(5): 792-795.
Dugdale, D J, Brand, S & Abram, R A (2000). Direct calculation of k.p parameters for wurtzite AlN, GaN and InN. Physical Review B 61(19): 12933-12938.
Kaliteevski, M A , Brand, S , Abram, R A , Nikolaev, V V, Maximov, M V, Ledentsov, N N, Sotomayor Torres, C M & Kavokin, A V (2000). Exciton polaritons in a cylindrical microcavity with an embedded quantum wire. Physical Review B 61(20): 13791-13797.
Crow, G C & Abram, R A (2000). Monte Carlo simulations of hole transport in SiGe and Ge quantum wells. Semiconductor Science and Technology 15(1): 7-14.
Crow, G C, Abram, R A & Yangthaisong, A (2000). Monte Carlo simulations of SiGe n-MODFETs with high tensile-strained Si channels. Semiconductor Science and Technology 15(7): 770-775.
Kaliteevski, M A , Abram, R A & Nikolaev, V V (2000). Optical eigenmodes of a cylindrical microcavity. Journal of Modern Optics 47(4): 677-684.
Ryan, D M, Abram, R A & Robbins, D J (2000). Optical properties of asymmetric InGaAs/InP coupled quantum wells. IEE Proceedings - Optoelectronics 147(2): 83-88.
Kaliteevski, M A , Brand, S , Abram, R A , Krauss, T F, de La Rue, R M & Millar, P (2000). Two-dimensional Penrose-tiled photonic quasicrystals: diffraction of light and fractal density of modes. Journal of Modern Optics 47(11): 1771-1778.
Kaliteevski, M A , Brand, S , Abram, R A , Krauss, T F DeLa Rue, R & Millar, P (2000). Two-dimensional Penrose-tiled photonic quasicrystals: from diffraction pattern to band structure. Nanotechnology 11(4): 274-280.
Pugh, S K , Dugdale, D J , Brand, S & Abram, R A (1999). Band-gap and k.p. parameters for GaAlN and GaInN alloys. Journal of Applied Physics 86: 3768-3772.
Kaliteevski, M A , Abram, R A , Nikolaev, V V & Sokolovski, G S (1999). Bragg reflectors for cylindrical waves. Journal of Modern Optics 46(5): 875-890.
Harrison, D , Abram, R A & Brand, S (1999). Characteristics of impact ionization rates in direct and indirect gap semiconductors. Journal of Applied Physics 85(12): 8186-8192.
Dugdale, D J , Brand, S , Abram, R A & Pugh, S K (1999). Determination of band structure parameters in nitride alloys for use in quantum well calculations. Physica Status Solidi B 216(1): 351-354.
Coles, R A , Abram, R A , Brand, S & Burt, M G (1999). Dipole matrix elements and the nature of charge oscillation under coherent interband excitation in quantum wells. Physical Review B 60(19): 13306-13309.
Pugh, S K , Dugdale, D J , Brand, S & Abram, R A (1999). Electronic structure calculations on nitride semiconductors. Semiconductor Science and Technology 14(1): 23-31.
Crow, G C & Abram, R A (1999). High mobility electron gases in Si/Si_0.77Ge_0.23 quantum wells at 1.7 K. Semiconductor Science and Technology 14(8): 721-726.
Harrison, D, Abram, R A & Brand, S (1999). Impact ionization rate calculations in wide band gap semiconductors. Journal of Applied Physics 85(12): 8178-8185.
Crow, G C & Abram, R A (1999). Monte Carlo simulations of capture into quantum well structures. Semiconductor Science and Technology 14(1): 1-11.
Crow, G C & Abram, R A (1999). Monte Carlo simulations of electron transport in coupled Si quantum wells. Semiconductor Science and Technology 14(12): 1107-1113.
Crow, G C & Abram, R A (1999). Performance predictions for a silicon velocity modulation transistor. Journal of Applied Physics 85(2): 1196-1202.
Clark, SJ, Al-Allak, HM, Brand, S & Abram, RA (1998). Structure and electronic properties of FeSi2. Physical Review B 58(16): 10389-10393.
Walmsley, M & Abram, R A (1997). Carrier dynamics model of fast refractive index changes in semiconductor laser amplifiers. IEE Proceedings - Optoelectronics 144(4): 189-196.
Hoare, D & Abram, R A (1997). Monte Carlo Simulation of PHEMTs operating up to terahertz frequencies. International Journal of Electronics 83: 429-439.
Crow, G C & Abram, R A (1997). Monte Carlo simulations of carrier transport in AlGaInP laser diodes. IEEE Journal of Quantum Electronics 33: 1551-1556.
Crow, G C & Abram, R A (1997). Monte Carlo simulations of charge transport in high-speed lasers. IEEE Journal of Quantum Electronics 33: 1190-1196.
Walmsley, M & Abram, R A (1996). A fast Poisson solver for realistic semiconductor device structures. Compel 15: 31-51.
Hoare, D, Abram, R A & Kelsall, R W (1996). Monte Carlo simulation of real and reciprocal space transfer of electrons in a pseudomorphically-strained GaAs/In_0.15Ga_0.85As/GaAs quantum well. Solid State Electronics 39: 601-610.
Crow, G C & Abram, R A (1995). A k.p model for carrier capture by a quantum well. Semiconductor Science and Technology 10: 1221-1228.
Hughes, D T, Abram, R A & Kelsall, R W (1995). An investigation of graded and uniform base Ge_xSi_1-x HBTs using a Monte Carlo simulation. IEEE Transactions on Electron Devices 42: 201-208.
Wilson, S P, Brand, S & Abram, R A (1995). Avalanche multiplication properties of GaAs calculated from spatially transient ionization coefficients. Solid State Electronics 38: 2095-2100.
Crow, G C & Abram, R A (1994). A k.p model for hole capture into a quantum well. Superlattices and Microstructures 15: 127-127.
Abram, R A (1993). Effects of heavy doping and high-excitation on the band structure of gallium arsenide. Semiconductors and Semimetals 39: 259-316.
Crow, G C, Kelsall, R W & Abram, R A (1993). Monte Carlo simulations of low-field hole transport in strained InGaAs quantum wells. Semiconductor Science and Technology 8: 219-223.
Wilson, S P , Brand, S, Beattie, A R & Abram, R A (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds and anti-thresholds in indium phosphide. Semiconductor Science and Technology 8: 1546-1556.
Wilson, S P , Brand, S , Beattie, A R & Abram, R A (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors: thresholds, anti-thresholds and rates in GaAs and AlGaAs. Semiconductor Science and Technology 8: 1944-1956.
Wilson, S P, Brand, S, Beattie, A R & Abram, R A (1993). The use of realistic band structure in impact ionization calculations for wide bandgap semiconductors - application to InP and GaAs. Compel 12: 457-473.
Walmsley, M , Abram, R A & Burt, M G (1993). Ultrafast nonlinear optical response of quantum wells with one and two conduction subbands. Semiconductor Science and Technology 8: 268-275.
Hughes, D T , Abram, R A , Kelsall, R W & Holden, A J (1992). A comparison of transient velocity overshoot in Si and GaAs structures. Semiconductor Science and Technology 7: B390-B393.
Beattie, A R, Abram, R A & Scharoch, P (1992). Hole impactionization rates in InP and In_0.53Ga_0.47As. Semiconductor Science and Technology 7: B512-B516.
Chamberlain, M P, Hoare, D , Kelsall, R W & Abram, R A (1992). Monte Carlo simulation of electron transport in GaAs/Ga_1-xAl_xAs quantum wells using different phonon models. Semiconductor Science and Technology 7: B45-B48.
Kelsall, R W , Abram, R A , Batty, W & O'Reilly, E P (1992). Monte Carlo simulation of hole mobilities in an InGaAs/GaAs strained layer quantum well. Semiconductor Science and Technology 7: 86-91.
Kelsall, R W & Abram, R A (1992). Monte Carlo simulations of field and carrier density-dependent hole transport in an InGaAs/GaAs strained layer quantum well. Semiconductor Science Technology 7: 312-B315.
Abram, R A, Wood A C G & Robbins, D J (1991). Optical properties of InGaAs/InP strained quantum wells. Proceedings of SPIE 1361: 424-433.
Kelsall, R W, Wood, A C G & Abram, R A (1991). Phonon scattering and mobility of holes in a GaAs/AlAs quantum well. Semiconductor Science and Technology 6: 841-849.
Warren, G J , Brand, S , Abram, R A & Kelsall, R W (1991). Simulation of electron transport in a (GaAs)₁₂/(AlAs)₁₂ superlattice. Semiconductor Science and Technology 6: 784-789.
Taylor, R I , Abram, R A , Burt, M G & Smith, C (1990). A detailed study of Auger recombination in 1.3 micron InGaAsP/InP quantum wells and quantum well wires. Semiconductor Science and Technology 5: 90-104.
Kelsall, R W , Taylor, R I , Wood, A C G & Abram, R A (1990). Matrix elements for hole-phonon scattering in a semiconductor quantum well. Semiconductor Science and Technology 5: 877-883.
Robbins, D J, Wood, A C G & Abram, R A (1990). Modelling of strained layer lasers. Institute of Physics Conference Series - Gallium Arsenide and Related Compounds 1990 533-538.
Beattie, A R, Abram, R A & Scharoch, P (1990). Realistic evaluation of impact ionisation and Auger recombination rates for the ccch transition in InSb and InGaAsP. Semiconductor Science and Technology 5: 738-744.
Childs, G N & Abram, R A (1989). Electron-electron collision broadening of the conduction band edge state in heavily doped n-type indium oxide. Solar Energy Materials 18: 399-409.
Kelsall, R W , Taylor, R I , Wood, A C G & Abram, R A (1989). Hole transport and relaxation in the valence bands of a GaAs/AlAs quantum well. Superlattices and Microstructures 5: 207-211.
Beattie, A R Scharoch, P & Abram, R A (1989). Impact ionisation threshold energy surfaces for anisotropic band structures in semiconductors. Semiconductor Science and Technology 4: 715-723.
Scharoch, P & Abram, R A (1988). A method of determining the overlap integrals used in calculations of Auger transition rates in semiconductors. Semiconductor Science and Technology 3: 973-978.
Abram, R A, Kelsall, R W & Taylor, R I (1988). Auger recombination In low dimensional structures. Journal of Physics and Chemistry of Solids 49: 607-613.
Jones, R E & Abram, R A (1988). Hot hole creation due to impact excitation in the metal electrode of a forward biased MIS structure. Solid State Electronics 31: 989-997.
Taylor, R I & Abram, R A (1988). The effects of non-parabolic band structure on Auger transition rates in bulk semiconductors, quantum wells and quantum well wires. Semiconductor Science and Technology 3: 859-864.
Buchanan, D A, Abram, R A & Morant, M J (1987). Charge trapping in silicon-rich Si₃N₄ thin films. Solid State Electronics 30: 1295-1301.
Archibald, I W & Abram, R A (1987). Experimental determination of the density of gap states in amorphous silicon by Schottky barrier admittance. Philosophical Magazine B 56: 429-441.
Taylor, R I , Burt, M G & Abram, R A (1987). Generation of superlattice bandstructure using a wavefunction matching technique. Superlattices and Microstructures 3: 63-67.
Childs, G N , Brand, S & Abram, R A (1986). Intervalence band absorption in semiconductor laser materials. Semiconductor Science and Technology 1: 116-120.
Archibald, I W & Abram, R A (1986). More theory of the admittance of an amorphous silicon Schottky barrier. Philosophical Magazine B 54: 421-438.
Taylor, R I, Kelsall, R W & Abram, R A (1986). Theory of Auger recombination in a quantum well wire. Surface Science 174: 169-174.
Abram, R A (1985). Bandgap narrowing due to many-body effects in heavily doped semiconductors. Solid State Electronics 28: 203-203.
Smith, C, Abram, R A & Burt, M G (1985). Theory of Auger recombination in a quantum well heterostructure. Superlattices and Microstructures 1: 119-123.
Smith, C, Abram, R A & Burt, M G (1984). Auger recombination in long-wavelength quantum well lasers. Electronics Letters 20: 893-894.
Abram, R A , Childs, G N & Saunderson, P A (1984). Band gap narrowing due to many-body effects in silicon and gallium arsenide. Journal of Physics C: Solid State Physics 17: 6105-6125.
Brand, S & Abram, R A (1984). Calculations of overlap integrals for Auger processes involving direct band gap semiconductors. Journal of Physics C: Solid State Physics 17: L201-L206.
Brand, S & Abram, R A (1984). Calculations of the commonly neglected terms in the matrix element for Auger and impact ionisation processes in semiconductors. Journal of Physics C: Solid State Physics 17: L571-L574.
Burt, M G Brand, S , Smith, C & Abram, R A (1984). Overlap integrals for Auger recombination in direct-bandgap semiconductors: calculations for conduction and heavy-hole bands in GaAs and InP. Journal of Physics C: Solid State Physics 17: 6385-6401.
Abram, R A (1983). A classical lattice theory of multiphonon release of trapped electrons in semiconductors. Philosophical Magazine B 47: 183-189.
Archibald, I W & Abram, R A (1983). A theory of the admittance of an amorphous silicon Schottky barrier. Philosophical Magazine B 48: 111-125.
Smith, C, Abram, R A & Burt, M G (1983). Auger recombination in a quantum well heterostructure. Journal of Physics C: Solid State Physics 16: L171-L175.
Brand, S & Abram, R A (1983). Self-consistent calculations of electron and hole sub-band energies for an n-p superlattice in GaAs. Journal of Physics C: Solid State Physics 16: 6111-6120.
Abram, R A & Doherty, P J (1982). A theory of capacitance-voltage measurements on amorphous silicon Schottky barriers. Philosophical Magazine B 45: 167-176.
Abram, R A (1982). A theory of multiphonon release of trapped electrons in semiconductors. Philosophical Magazine B 46: 13-22.
Abram, R A (1980). Coupled oscillation theory of a noise cancelling microphone using piezoelectric plastic diaphragms. Journal of Physics D: Applied Physics 13: 195-200.
Abram, R A & Goodfellow, R C (1980). Coupling efficiency calculations on an integrated LED-sphere lens source for optical fibres. Electronics Letters 16: 14-16.
Abram, R A (1980). Multiphonon processes in the model of Henry and Lang. Journal of Physics C: Solid State Physics 13: L753-L755.
Abram, R A (1980). Reaction effects in piezoelectric plastic film transducers for earphones. Journal of Physics D: Applied Physics 13: 2237-2242.
Abram, R A (1980). The theory of a piezoelectric plastic film transducer for earphones. Journal of Physics D: Applied Physics 13: 201-207.
Abram, R A, Rees, G J & Wilson, B L H (1978). Heavily doped semiconductors and devices. Advances In Physics 27(6): 799-892.
Abram, R A Allen, R W & Goodfellow, R C (1975). The coupling of light-emitting diodes to optical fibers using sphere lenses. Journal of Applied Physics 46: 3468-3474.
Abram, R A Fairholme, R J Tench, M D R & Gehring, K A (1975). The effect of substrate misorientation on the magnetic properties of epitaxial garnet films. Journal of Physics D: Applied Physics 8: 94-98.
Abram, R A (1974). A coupled mode formalism for elastic waveguides. Journal of Physics D: Applied Physics 7: 1329-1335.
Abram, R A (1974). A mode coupling theory for a parabolic index optical fibre whose axis deviates from straightness. Optics Communications 12: 338-340.
Abram, R A (1973). Localized states in inverted silicon-silicon dioxide interfaces. Journal of Physics C: Solid State Physics 6: L379-L381.
Abram, R A & Rees, G J (1973). Mode conversion in an imperfect waveguide. Journal of Physics A: Mathematical, Nuclear and General 6: 1693-1708.
Abram, R A & Edwards, S F (1972). The nature of the electronic states of a disordered system: I. Localized states. Journal of Physics C: Solid State Physics 5: 1183-1195.
Abram, R A & Edwards, S F (1972). The nature of the electronic states of a disordered system: II. Extended states. Journal of Physics C: Solid State Physics 5: 1196-1206.
Abram, R A & Herzenberg, A (1969). Rotational excitation of H₂ by slow electrons. Chemical Physics Letters 3: 187-190.

Supervises

Mr Ivan Iorsh